| PART |
Description |
Maker |
| IRF1902 IRF1B902 IRF1902TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)
|
International Rectifier
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STC5NF20V |
N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET?II POWER MOSFET
N-CHANNEL 20V - 0.030 OHM - 5A TSSOP8 2.7V-DRIVE STRIPFET II POWER MOSFET
N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET II POWER MOSFET
N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET⑩ II POWER MOSFET
N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFETII POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| IRF6601 |
DirectFET⑩ Power MOSFET(Vdss=20V)
DirectFET Power MOSFET(Vdss=20V)
|
IRF[International Rectifier]
|
| CDBF0320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
|
Comchip Technology
|
| STP210NF02 STB210NF02-1 STB210NF02 8543 STB210NF02 |
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET?/a> II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
From old datasheet system
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7404QPBF |
HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )
HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ )
|
International Rectifier
|
